Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Perný, Milan; Šály, Vladimír; Váry, Michal; Mikolášek, Miroslav; Huran, Jozef; Packa, Juraj

doi:10.2478/jee-2014-0027

Abstract

The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.

References

[1] KANNO, H.-IDE, D.-TSUNOMURA, Y.-TAIRA, S.-BABA, T.-YOSHIMINE, Y.-TAGUCHI, M.-KINOSHITA, T.-SAKATA, H.-MARUYAMA, E. : Over 22% Efficient HIT Solar Cell, In: Proceedings of the 23rd European photovoltaic solar energy conference and exhibition, Valencia, Spain, 2008, pp. 1136-1139.
Search in Google Scholar
[2] STREET, R. A. : Technology and Applications of Amorphous Silicon, Springer, New York, 2000.10.1007/978-3-662-04141-3
Search in Google Scholar
[3] CHANG, Y. L.-CHEN, M. Y.-LIU, J. S. Q.-CHIEN, Y. J.-YANG, P. C.-HUANG, M. Y. : Silicon Carbide Emitter for Heterojunction Solar Cells (2013), 1210-1212.
Search in Google Scholar
[4] LEE, C. H.-LIM, K. S. : Boron-Doped Amorphous Diamondlike Carbon as a New p-Type Window Material in Amorphous Silicon p-i-n Solar Cells, Appl. Phys. Lett. 72 (1998), 106.10.1063/1.120659
Search in Google Scholar
[5] HAMAKAWA, Y. : Present Status of Solar Photovoltaic R&D Projects in Japan, Surf. Sci. 86 (1979), 444-461.10.1016/0039-6028(79)90423-0
Search in Google Scholar
[6] NITTA, Y.-OKAMOTO, H.-HAMAKAWA, Y. : Amorphous Si: Heteroface Photovoltaic Cells based upon p-i-n Junction Structure, Jpn. J. Appl. Phys. 19 (1980), 143-148.10.7567/JJAPS.19S2.143
Search in Google Scholar
[7] OKAMOTO, H.-YAMAGUCHI, T.-NITTA, Y.-HAMAKAWA, Y. : Effect of DC Electric Field on the Basic Properties of RF Plasma Deposited a-Si. jour J. Non-Cryst. Solids.
Search in Google Scholar
[8] OKAMOTO, H.-NITTA, Y.-YAMAGUCHI, T.-HAMAKAWA, Y. : Device Physics and Design of a-Si ITO/p-i-n Heteroface Solar Cells, Sol. Cell Mater 2 (1980), 313-325.10.1016/0165-1633(80)90007-6
Search in Google Scholar
[9] GRAY, W.-LOBODA, M.-BREMMER, J.-STRUYF, H.- LEPAGE, M.-Van HOVE, M.-DONATON, R.-SLEECKX, E.-STUCCHI, M.-LANCKMANS, F.-GAO, T.-BOULLART, W.-COENGRACHTS, B.-MAENHOUDT, M.- VANHAELEMEERSCH, S.-MEYNEN, H.-MAEX, K. : J. Electrochem. Soc. 150 (2003), G404.10.1149/1.1577340
Search in Google Scholar
[10] CHIANG, C.-CHEN, M.-KO, C.-WU, Z.-JANG, S.-LIANG, M. : Jpn. J. Appl. Phys. 42 Part 1 (2003), 4273.10.1143/JJAP.42.4273
Search in Google Scholar
[11] BAKLANOV, M.-Van HOVE, M.-MANNAERT, G.-VANHAELMEERSCH, S.-BENDER, H.-CONARD, T.-MAEX, K. : J. Vac. Sci. Technol. B 18 (2000), 1281.10.1116/1.591375
Search in Google Scholar
[12] MATSUDA, Y.-RATHORE, J.-INTERRANTE, L.-DAUSKARDT, R.-DUBOIS, G. : ACS Appl. Mater. Interfaces 4 (2012), 2659.10.1021/am300312y22500550
Search in Google Scholar
[13] CHARLES-ALFRED, C.-JOUSSEAUME, V. : Surf. Coat. Technol. 201 (2007), 9260.10.1016/j.surfcoat.2007.04.065
Search in Google Scholar
[14] LANCKMANS, F.-GRAY, W.-BRIJS, B.-MAEX, K. : Microelectron. Eng. 55 (2001), 329.10.1016/S0167-9317(00)00464-0
Search in Google Scholar
[15] SHIMIZU, H.-TAJIMA, N.-KADA, T.-NAGANO, S.-OHASHI, Y.-HASAKA, S. : Jpn. J. Appl. Phys. 49 Part 1 (2010), 05FF02.10.1143/JJAP.49.05FF02
Search in Google Scholar
[16] FURUYA, A.-YONEDA, K.-SODA, E.-YOSHIE, T.-OKAMURA, H.-SHIMADA, M.-OHTSUKA, N.-OGAWA, S. : J. Vac. Sci. Technol. B 23 (2005), 2522.10.1116/1.2132324
Search in Google Scholar
[17] LOURO, P.et al : Use of a-SiC:H Photodiodes in Optical Communications Applications, Advances in Photodiodes (2011).10.5772/14048
Search in Google Scholar
[18] MAGAFAS, L. : Study of Optical Sensors of the Form Al/a-SiC: H/c-Si (n) with High Sensitivity, Journal of Engineering Science and Technology Review (2008).10.25103/jestr.011.09
Search in Google Scholar
[19] KUMBHAR, A. et al : Photoluminescent, Wide-Bandgap a-SiC: H Alloy Films Deposited byCat-CVD using Acetylene, Thin Solid Films 395(1-2) (2001), 244-248.10.1016/S0040-6090(01)01263-9
Search in Google Scholar
[20] CARRENO, M. N. P. et al : Self-Sustained Bridges of a-SiC:H Films Obtained by PECVD Atlow Temperatures for MEMS Applications, Journal of Non-Crystalline Solids (2004), 338-340, 490-495.
Search in Google Scholar
[21] PERNÝ, M. et al : Optimalization of Amorphous Silicon Carbide Thin Films for Heterojunction Solar Cells, In: 28th European Photovoltaic Solar Energy Conference and Exhibition: Proceedings, Paris, France, 30 September - 4 Ocober 2013 - München: WIP, 2013, pp. 1915-1918.
Search in Google Scholar
[22] FAHRNER, W. R. : Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells, Springer, 2013.10.1007/978-3-642-37039-7
Search in Google Scholar
[23] FAHRNER, W. R.-MUELLER, T.-SCHERFF, M.-KNOENER, D.-NEITZERT, H. C. : Interface States Heterojunction Solar Cells, In: Proceedings of 4th World Conference Photovoltaic Energy Conversion, 2006, pp. 1822-182.10.1109/WCPEC.2006.279368
Search in Google Scholar
[24] PINGREE, L. S. C.-SCOTT, B. J.-RUSSELL, M. T.- MARKS, T. J.-HERSAM,M. C. : Negative Capacitance in Organic Light-Emitting Diodes, Applied Physics Letters 86 (2005), 073509.10.1063/1.1865346
Search in Google Scholar
[25] PINGREE, L. S. C.-SCOTT, B. J.-RUSSELL, M. T.- MARKS, T. J.-HERSAM, M. C. : Applied Physics Letters 86 (2005), 073509.10.1063/1.1865346
Search in Google Scholar
[26] PERERA, A. G. U.-SHEN, W. Z.-ERSHOV, M.-LIU, H. C.-BUCHANAN, M.-SCHAFF, W. J. : Applied Physics Letters 74 (1999), 3167.10.1063/1.124169
Search in Google Scholar

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Abstract

Paradigm

My account