Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Milan Perný; Vladimír Šály; Michal Váry; Miroslav Mikolášek; Jozef Huran; Juraj Packa

doi:10.2478/jee-2014-0027

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Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Journal of Electrical Engineering

Volume 65 (2014): Issue 3 (May 2014)

By: Milan Perný, Vladimír Šály, Michal Váry, Miroslav Mikolášek, Jozef Huran and Juraj Packa

Open Access

|Jun 2014

Abstract

The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.

References

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Articles in this issue

DOI: https://doi.org/10.2478/jee-2014-0027 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 174 - 178

Submitted on: Oct 24, 2013

Published on: Jun 17, 2014

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

PECVD,

heterojunction,

silicon carbide,

equivalent AC circuit,

complex impedance

Related subjects:

Engineering,

Introductions and overviews,

Engineering, other

© 2014 Milan Perný, Vladimír Šály, Michal Váry, Miroslav Mikolášek, Jozef Huran, Juraj Packa, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 65 (2014): Issue 3 (May 2014)