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The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma Cover

The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma

Journal of Electrical Engineering
Volume 64 (2013): Issue 6 (November 2013)
By: Robert Andok,  Anna Benčurová,  Pavol Nemec,  Anna Konečníková,  Ladislav Matay,  Jaroslava Škriniarová and  Pavol Hrkút  
Open Access
|Nov 2013

Authors

Robert Andok

Robert.Andok@savba.sk

Anna Benčurová

Pavol Nemec

Anna Konečníková

Ladislav Matay

Jaroslava Škriniarová

Jaroslava.Skriniarova@stuba.sk

Pavol Hrkút

DOI: https://doi.org/10.2478/jee-2013-0056 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 371 - 375
Published on: Nov 23, 2013
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
AZ 5214E resist,
PMMA resist,
image reversal,
EBDW lithography,
characteristic curves,
RIE,
etch-rates
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2013 Robert Andok, Anna Benčurová, Pavol Nemec, Anna Konečníková, Ladislav Matay, Jaroslava Škriniarová, Pavol Hrkút, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

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