The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma

Robert Andok; Anna Benčurová; Pavol Nemec; Anna Konečníková; Ladislav Matay; Jaroslava Škriniarová; Pavol Hrkút

doi:10.2478/jee-2013-0056

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The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma

Journal of Electrical Engineering

Volume 64 (2013): Issue 6 (November 2013)

By: Robert Andok, Anna Benčurová, Pavol Nemec, Anna Konečníková, Ladislav Matay, Jaroslava Škriniarová and Pavol Hrkút

Open Access

|Nov 2013

Abstract

In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N₂ plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.

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Articles in this issue

DOI: https://doi.org/10.2478/jee-2013-0056 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 371 - 375

Published on: Nov 23, 2013

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

characteristic curves,

RIE,

etch-rates

Related subjects:

Engineering,

Introductions and overviews,

Engineering, other

© 2013 Robert Andok, Anna Benčurová, Pavol Nemec, Anna Konečníková, Ladislav Matay, Jaroslava Škriniarová, Pavol Hrkút, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 64 (2013): Issue 6 (November 2013)