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Sputtering parameters used for deposition of SnO2 thin film_
| Technique | RF diode sputtering |
| Target | Tin (99.99%) |
| Gas | 50% Ar + 50% O2 |
| Sputtering pressure | 14 mTorr |
| Power | 150 W |
| Substrate-to-target distance | 7.5 cm |
| Substrate temperature | 25°C (no heating) |
| Rate of deposition: | 60 nm/h |
Resistance and sensor response variations of SnO2 films as a function of thickness
| SnO2 thickness (nm) | Ra (Ω) (at room temperature) | Rg (Ω) (at operating Temperature) | Operating temperature (°C) | Sensor response |
|---|---|---|---|---|
| 30 | 1.2 × 105 | 3.6 × 104 | 240 | 1.05 |
| 60 | 1.0 × 105 | 2.7 × 104 | 220 | 1.19 |
| 90 | 8.6 × 104 | 1.3 × 104 | 240 | 2.90 |
| 120 | 6.0 × 104 | 1.4 × 104 | 220 | 1.97 |
| 150 | 5.8 × 104 | 1.2 × 104 | 200 | 1.40 |
| 180 | 5.4 × 104 | 1.1 × 104 | 180 | 1.15 |