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Mechanical and Thermal Behavior of Semiconducting Cadmium Oxide at High-Pressure Cover

Mechanical and Thermal Behavior of Semiconducting Cadmium Oxide at High-Pressure

By: N. Bioud and  N. Benchiheub  
Open Access
|Dec 2024

Abstract

The effect of high pressures on the mechanical and thermal properties up to phase transition pressure for cubic rock-salt cadmium oxide (CdO) semiconducting compound is presented in this research. The calculations are based on the equation of state (EOS) parameters measured at ambient conditions reported in the literature. The approach used here was previously applied successfully for other materials. Our study shows that the parameters reflect the rigidity of the semiconductor and the melting temperature increases with increasing pressure, while some other parameters decrease gradually for our material of interest. A comparative analysis of some quantities for CdO compound under high pressure was done. Similar behaviors were observed in the literature for particular materials with particular structures. Furthermore, we calculated both the fracture toughness and the fracture surface energy, which are at around 1.23 MPa.m1/2 and 5.14 J.m-2, respectively.

DOI: https://doi.org/10.2478/awutp-2024-0009 | Journal eISSN: 2784-1057 | Journal ISSN: 1224-9718
Language: English
Page range: 142 - 156
Submitted on: Feb 17, 2024
Accepted on: Apr 25, 2024
Published on: Dec 12, 2024
Published by: West University of Timisoara
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year

© 2024 N. Bioud, N. Benchiheub, published by West University of Timisoara
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.