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Effectiveness of Geant4 in Monte Carlo Simulation Studyofphonon Conduction in Sn Host with Si Nanowire Interface Cover

Effectiveness of Geant4 in Monte Carlo Simulation Studyofphonon Conduction in Sn Host with Si Nanowire Interface

Annals of West University of Timisoara - Physics
Volume 61 (2019): Issue 1 (December 2019)
By: C. Iheduru,  M. A. Eleruja,  B. Olofinjana,  O. E. Awe and  A.D.A Buba  
Open Access
|Jan 2020

Authors

C. Iheduru

iheduruc@gmail.com

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ife, Nigeria
Department of Physics, University of Abuja, Abuja, Nigeria

M. A. Eleruja

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ife, Nigeria

B. Olofinjana

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ife, Nigeria

O. E. Awe

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ife, Nigeria
Department of Physics, University of Ibadan, Ibadan, Nigeria

A.D.A Buba

Department of Physics, University of Abuja, Abuja, Nigeria
DOI: https://doi.org/10.2478/awutp-2019-0001 | Journal eISSN: 2784-1057 | Journal ISSN: 1224-9718
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Language: English
Page range: 12 - 21
Submitted on: Feb 6, 2019
Accepted on: Jun 27, 2019
Published on: Jan 21, 2020
Published by: West University of Timisoara
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
Ballistic conduction,
heat flow,
MC simulation,
Silicon – Tin,
Geant4
Related subjects:
Materials sciences,
Modeling and simulations,
Physics,
Theoretical and mathematical physics,
Condensed matter physics,
Medical physics

© 2020 C. Iheduru, M. A. Eleruja, B. Olofinjana, O. E. Awe, A.D.A Buba, published by West University of Timisoara
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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