Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface

Pavlyk, Bohdan; Kushlyk, Markijan; Slobodzyan, Dmytro; Matvijishyn, Igor; Lys, Roman; Jałbrzykowski, Marek

doi:10.2478/ama-2018-0012

Abstract

We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiation-stimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities.

References

1. Borkovska O.Y, Dmitruk P.L., Litovchenko V.H. (1984), Effect of radiation ordering in heterojunctions of (n-Si)-(p-GaP), Semiconductors, 18(10), 1808-1810.
Search in Google Scholar Back to article
2. Mahkamov S., Tursunov N.A., Ashurov M. (1999), About the peculiarities of formation of radiation defects in silicon structures, Technical Physics, 69(1), 121-123.10.1134/1.1259262
Search in Google Scholar Back to article
3. Nikolaev D.V., Antonova I.V., Naumova O.V. (2003), Charge accumulation in oxide and interface states of silicon-on-insulator structures after irradiation by electrons and γ-rays, Semiconductors, 37(4), 443-449.10.1134/1.1568462
Open DOI Search in Google Scholar Back to article
4. Marchenko I.G., Zhdanovich N.E. (2010), Influence of irradiation by electrons on the electrical parameters of silicon p-n-structures, weakened by aluminum screens, Technical Physics, 36(10), 45-51.10.1134/S1063785010050226
Search in Google Scholar Back to article
5. Kalinina E.V., Kossov V.G., Yafaev R. R. (2010), High-temperature radiation-strong rectifier based on 4H-SiC alumimium ion implanted p⁺-n-junctions, Semiconductors, 44(6), 807-815.10.1134/S1063782610060151
Open DOI Search in Google Scholar Back to article
6. Dolgolenko A.P., Litovchenko P.G., Varentsov M.D. (2006), Particularities of the formation of radiation defects in silicon with low and high concentration of oxygen, Physica Status Solidi, 243(8), 1842-1852.10.1002/pssb.200541074
Search in Google Scholar Back to article
7. Makara V.A., Vasiliev M.A., Steblenko L.P. (2008), Caused by magnetic field changes of impurity composition and microhardness of silicon crystals, Semiconductors, 42(9), 1061-1064.10.1134/S106378260809008X
Open DOI Search in Google Scholar Back to article
8. Skvortsov A.A., Orlov A.M., Solov’ev A.A. (2009), Magnetoplastic effect in silicon: the search for new methods of management of structure-sensitive properties of elemental semiconductors, Physics of the Solid State, 51(12), 2304-2308.10.1134/S1063783409120038
Search in Google Scholar Back to article
9. Mudriy S.I., Kulyk Y.O., Steblenko L.P. (2010), Change of internal stress and lattice parameter of silicon crystals, stimulated by the combined influence of X-ray irradiation and a magnetic field, Physics and Chemistry of Solid State, 11(2), 334-337.
Search in Google Scholar Back to article
10. Slobodzyan D.P., Pavlyk B.V., Kushlyk M.O. (2015), Features of influence of x-radiation and magnetic field on the electrical characteristics of barrier structures based on p-si with dislocation, designed for solar energy, J. Nano- Electron. Phys., 7(4), 04051-1 - 04051-5.
Search in Google Scholar Back to article
11. Peka G.P., Strіkha V.І. (1992), Surface and contact phenomena in semiconductors, Kyiv, Lybid.
Search in Google Scholar Back to article
12. Pavlyk B.V., Slobodzyan D.P., Kushlyk M.O. (2012), Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures, Semicondu-ctors, 46(8), 1017-1021.10.1134/S1063782612080167
Search in Google Scholar Back to article
13. Pavlyk B.V., Slobodzyan D.P., Kushlyk M.O. (2013), Electro-physical characteristics of near-surface layers in p-si crystals with sputtered al films and subjected to elastic deformation, Ukr. J. Phys., 58(8), 742-747.10.15407/ujpe58.08.0742
Search in Google Scholar Back to article

Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface

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