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Heavily Si-doped InAs photoluminescence measurements Cover

Heavily Si-doped InAs photoluminescence measurements

Materials Science-Poland
Volume 35 (2017): Issue 3 (October 2017)
By: Kacper Grodecki,  Krzysztof Murawski,  Aleksandra Henig,  Krystian Michalczewski,  Djalal Benyahia,  Łukasz Kubiszyn and  Piotr Martyniuk  
Open Access
|Oct 2017

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DOI: https://doi.org/10.1515/msp-2017-0075 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 647 - 650
Submitted on: Apr 3, 2017
Accepted on: Aug 30, 2017
Published on: Oct 31, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
In As,
photoluminescence,
Burstein-Moss,
heavy doping
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2017 Kacper Grodecki, Krzysztof Murawski, Aleksandra Henig, Krystian Michalczewski, Djalal Benyahia, Łukasz Kubiszyn, Piotr Martyniuk, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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