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Heavily Si-doped InAs photoluminescence measurements Cover

Authors

Kacper Grodecki

kacper.grodecki@wat.edu.pl

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland

Krzysztof Murawski

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland

Aleksandra Henig

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland

Krystian Michalczewski

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland

Djalal Benyahia

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland

Łukasz Kubiszyn

Kaliskiego St., 00-908 Warsaw, Poland 2Vigo System S.A., 129/133 Poznañska St., 05-850, Ożarów Mazowiecki, Poland

Piotr Martyniuk

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
DOI: https://doi.org/10.1515/msp-2017-0075 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 647 - 650
Submitted on: Apr 3, 2017
Accepted on: Aug 30, 2017
Published on: Oct 31, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2017 Kacper Grodecki, Krzysztof Murawski, Aleksandra Henig, Krystian Michalczewski, Djalal Benyahia, Łukasz Kubiszyn, Piotr Martyniuk, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.