Heavily Si-doped InAs photoluminescence measurements
Authors
Kacper Grodecki
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
Krzysztof Murawski
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
Aleksandra Henig
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
Krystian Michalczewski
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
Djalal Benyahia
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
Łukasz Kubiszyn
Kaliskiego St., 00-908 Warsaw, Poland 2Vigo System S.A., 129/133 Poznañska St., 05-850, Ożarów Mazowiecki, Poland
Piotr Martyniuk
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908, Warsaw, Poland
Language: English
Page range: 647 - 650
Submitted on: Apr 3, 2017
Accepted on: Aug 30, 2017
Published on: Oct 31, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
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© 2017 Kacper Grodecki, Krzysztof Murawski, Aleksandra Henig, Krystian Michalczewski, Djalal Benyahia, Łukasz Kubiszyn, Piotr Martyniuk, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.