Transmission spectra (a) and optical band energy (b) of as deposited and annealed Cd1−xZnxSe thin films.
Table 1
Optical band gap and dispersion parameters for investigated thin films.
| Composition | Eg (eV) | Eg (eV) | Eo (eV) | Eo (eV) | Ed (eV) | Ed (eV) | Thickness (nm) | Thickness (nm) |
|---|---|---|---|---|---|---|---|---|
| as dep | annealed | as dep | annealed | annealed | annealed | as dep | annealed | |
| CdSe | 1.69 | 1.65 | 3.42 | 3.19 | 19.37 | 18.78 | 180 | 177 |
| Cd:60Zn:40Se | 2.1 | 2 | 4.07 | 3.96 | 20.87 | 20.88 | 158 | 154 |
| ZnSe | 2.57 | 2.5 | 4.85 | 4.58 | 22.67 | 22.47 | 190 | 179 |
Experimental and modeled values of ψ and Δ for Cd1−xZnxSe thin films annealed at 400 ΰC.
Variation of optical constants (a) refractive index and (b) extinction coefficient in Cd1−xZnxSe thin films.
The plot of (n2−1)−1 versus photon energy (hν)2 for as deposited and annealed Cd1−xZnxSe thin films.