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Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method Cover

Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Wojciech Kijaszek,  Waldemar Oleszkiewicz,  Adrian Zakrzewski,  Sergiusz Patela and  Marek Tłaczała  
Open Access
|Nov 2016

Figures & Tables

Growth rate of the SiOxNy film deposited by the PECVD technique as a function of ammonia flow rate.
Growth rate of the SiOxNy film deposited by the PECVD technique as a function of ammonia flow rate.
Refractive index as a function of wavelength for SiOxNy films deposited at different NH3 flow rates.
Refractive index as a function of wavelength for SiOxNy films deposited at different NH3 flow rates.
Comparison of reflection coefficients of the Si substrate, SiO2 buffer and SiO2/SiON bilayer.
Comparison of reflection coefficients of the Si substrate, SiO2 buffer and SiO2/SiON bilayer.
DOI: https://doi.org/10.1515/msp-2016-0111 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 868 - 871
Submitted on: Apr 20, 2016
|
Accepted on: Sep 26, 2016
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Published on: Nov 27, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
silicon oxynitride,
RF PECVD,
spectroscopic ellipsometry,
reflection coefficient
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Wojciech Kijaszek, Waldemar Oleszkiewicz, Adrian Zakrzewski, Sergiusz Patela, Marek Tłaczała, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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