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Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate Cover

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Materials Science-Poland
Volume 34 (2016): Issue 3 (September 2016)
By: R. Skonieczny,  P. Popielarski,  W. Bała,  K. Fabisiak,  K. Paprocki,  M. Jancelewicz,  M. Kowalska and  M. Szybowicz  
Open Access
|Sep 2016

Figures & Tables

Fig. 1

Polarized Raman spectra (VV and VH) for CoPc thin layer deposited on Si substrate.
Polarized Raman spectra (VV and VH) for CoPc thin layer deposited on Si substrate.

Fig. 2

Orientation of CoPc molecules (angle between molecule and substrate) obtained from Raman measurements (a) before and (b) after annealing process for 300 nm thick CoPc film.
Orientation of CoPc molecules (angle between molecule and substrate) obtained from Raman measurements (a) before and (b) after annealing process for 300 nm thick CoPc film.

Fig. 3

Distribution of the molecular forms for CoPc thin layer obtained from Raman measurements before (black) and after (red) annealing.
Distribution of the molecular forms for CoPc thin layer obtained from Raman measurements before (black) and after (red) annealing.

Fig. 4

AFM images for CoPc thin layer obtained for a) before and b) after annealing process.
AFM images for CoPc thin layer obtained for a) before and b) after annealing process.

Fig. 5

Current-voltage characteristics (I-V) for CoPc thin layers before annealing; inset in Fig. 5 shows the electrical diagram.
Current-voltage characteristics (I-V) for CoPc thin layers before annealing; inset in Fig. 5 shows the electrical diagram.

Fig. 6

Current-voltage characteristics (I-V) for CoPc thin layers before and after annealing process at the temperature of 473 K for 6 hours in air; the inset in Fig. 6 shows the electrical diagram.
Current-voltage characteristics (I-V) for CoPc thin layers before and after annealing process at the temperature of 473 K for 6 hours in air; the inset in Fig. 6 shows the electrical diagram.

Fig. 7

Plots of junction resistance, Rj, against applied voltage at room temperature for Au/CoPc/n-Si/Al structure annealed at temperature of 473 K for 6 hours in air.
Plots of junction resistance, Rj, against applied voltage at room temperature for Au/CoPc/n-Si/Al structure annealed at temperature of 473 K for 6 hours in air.

The surface parameters obtained from AFM images for CoPc thin film before and after annealing process_

[nm]Grain sizeRaRMSAvg. heightMax. heightAvg./Max.
before annealing71.37±14.654.996.3713.0153.400.244
after annealing83.97±7.9714.5020.8032.40186.700.174

Electrical parameters obtained from I-V characteristic for CoPc structure, measured at room temperature in dark_

Au/CoPc/n-Si/AlSeries resistance of the structure [Ω]Potential barrier [eV]
before annealing52000.79
after annealing306000.83
DOI: https://doi.org/10.1515/msp-2016-0086 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 676 - 683
Submitted on: Feb 22, 2016
|
Accepted on: Jul 9, 2016
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Published on: Sep 28, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
copper phthalocyanine,
Raman spectroscopy,
molecular orientation,
atomic force microscopy,
heat treatment
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 R. Skonieczny, P. Popielarski, W. Bała, K. Fabisiak, K. Paprocki, M. Jancelewicz, M. Kowalska, M. Szybowicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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