Have a personal or library account? Click to login

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films

Open Access
|Jun 2016

References

  1. Jiang T., Ozin G.A., J. Mater. Chem., 8 (1998), 1099.
  2. Radot M.B., Day P., Adv. Inorg. Chem. Radiochem., 10 (1967), 247.
  3. Khadraoui M., Benramdane N., Mathieu C., Bouzidi A., Miloua R., Kebbab Z., Solid State Commun., 150 (2009), 297.
  4. Lofersky J.J., Appl. Phys., 27 (1956), 77.
  5. Khelia C., Boubakar K., Ben Nasrallah T., Amlouk M., Belgaum S., Saadallah F., Yocoubi N., J. Crys. Growth, 311 (2009), 1032.
  6. Yue G.H., Wang W., Wang L.S., Wang X., Yan P.X., Chen Y., Peng D.L., J. Alloy. Compd., 474 (2010), 445.
  7. Khomane A.S., J. Alloy. Compd., 506 (2010), 849.
  8. Chate P.A., Hankare P.P., Sathe D.J., J. Alloy. Compd., 505 (2010), 140.
  9. Sehlat R., Armstrong N.R., Parkinson B.A., Pettenkofer C., Jaegermann W., Surf. Sci., 385 (1997), 1.
  10. Ghosh B., Das M., Banerjee P., Das S., Appl. Surf. Sci., 254 (2008), 6436.
  11. Salah H., Bouzouita H., Rezig B., Thin Solid Films, 480 – 481 (2005), 439.
  12. Lopez S., Granades S., Ortiz A., Semicond. Sci. Technol., 11 (1996), 433.
  13. Manjula N., Usharani K., Abalu R., Nagarethinam V.S., Int. J. Chem. Tech. Res., 6 (2014), 705.
  14. Usharani K., Balu A.R., Acta Metall. Sin., 28 (2015) 64.
  15. Narasimman V., Nagarethinam V.S., Balu A.R., Suganya M., Anbarasi M., Usharani K., Int. J. Appl. Res. Eng. Sci., 1 (2014), 7.
  16. Al-Douri Y., Khasawneh Q., Kiwan S., Hashim U., Abd Hamid S.B., Reshak A.H., Bouhemadou A., Ameri M., Khenata R., Energ. Convers. Mange., 82 (2014), 238.
  17. Rajashree C., Balu A.R., Nagarethinam V.S., Surf. Eng., 31 (2015), 316.
  18. Syed Basheer Ahamed M.G., Nagarethinam V.S., Balu A.R., Thayumanavan A., Murali K.R., Sanjeeviraja C., Jayachndran M., Cryst. Res. Technol., 45 (2010), 421.
  19. Chu J., Jin Z., Wang W., Liu H., Wang D., Yang J., Hong Z., J. Alloy. Compd., 517 (2012), 54.
  20. Syed Basheer Ahamed M.G., Balu A.R., Nagarethinam V.S., Thayumanavan A., Murali K.R., Sanjeeviraja C., Jayachndran M., Cryst. Res. Technol., 45 (2010), 387.
  21. Anbarasi M., Sivaraman T., Nagarethinam V.S., Balu A.R., Int. J. Chem. Phys. Sci., 3 (2014), 1.
  22. Chalana S.R., Vinodkumar R., Navas I., Ganesan V., Mahadevan Pillai V.P., J. Lumin., 132 (2012), 944.
  23. Sivaraman T., Balu A.R., Nagarethinam V.S., Mat. Sci. Semicond. Proc., 27 (2014), 915.
  24. Chaura S., Chaura N.B., Pandey R.K., Physica E, 28 (2005), 439.
  25. Ye C.H., Fang X.S., Li G.H., Zhang L.D., Appl. Phys. Lett., 85 (2004), 3035.
  26. Ehrlich W., Gumlich H.E., Tschierse D., J. Crys. Growth, 72 (1985), 37.
  27. Vigil O., Riech I., Garcia-Rocha M., Zelayaangel O., J. Vac. Sci. Technol. A, 15 (1997), 2282.
  28. Mochizuki K., Satoh M., Igaki K., Jpn. J. Appl. Phys., 22 (1983), 1414.
DOI: https://doi.org/10.1515/msp-2016-0035 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 393 - 398
Submitted on: Oct 30, 2015
Accepted on: Jan 15, 2016
Published on: Jun 10, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2016 J. Srivind, V.S. Nagarethinam, A.R. Balu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.