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Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer Cover

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

Open Access
|Aug 2016

Abstract

In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n- lP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.

DOI: https://doi.org/10.1515/msp-2015-0089 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 593 - 600
Submitted on: Dec 27, 2014
Accepted on: Jun 1, 2015
Published on: Aug 30, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2016 Ömer Güllü, Abdulmecit Türüt, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.