Have a personal or library account? Click to login
Structure of AlN films deposited by magnetron sputtering method Cover

Structure of AlN films deposited by magnetron sputtering method

Materials Science-Poland
Volume 33 (2015): Issue 3 (September 2015)
By: K. Nowakowska-Langier,  R. Chodun,  K. Zdunek,  R. Minikayev and  R. Nietubyc  
Open Access
|Aug 2016

References

  1. [1] KAR J.P., BOSE G., TULI S., Vacuum, 81 (4) (2006), 494.10.1016/j.vacuum.2006.07.006
    Search in Google Scholar
  2. [2] CHIU K.H., CHEN J.H., CHEN H.R., HUANG R.S., Thin Solid Films, 515 (2007), 4819.10.1016/j.tsf.2006.12.181
    Search in Google Scholar
  3. [3] OLIVARES J., RIVERA J., BRIONES A., Diam. Relat. Mater., 16 (2007), 1421.
    Search in Google Scholar
  4. [4] JANG K., LEE K., KIM J., HWANG S., LEE J., DHUNGEL S.K., JUNG S., YI J., Mat. Sci. Semicon. Proc., 9 (2006), 1137.10.1016/j.mssp.2006.10.052
    Search in Google Scholar
  5. [5] PRINZ G.M., LADENBURGER A., FENEBERG M., SCHIRRA M., THAPA S.B., BICKERMANN M., EPELBAUM B.M., SCHOLZ F., THONKE K., SAUER R., Superlattice. Microst., 40 (2006), 513.10.1016/j.spmi.2006.10.001
    Search in Google Scholar
  6. [6] DUBOIS M.A., MURALT P., Appl. Phys. Lett., 74 (1999), 3032.10.1063/1.124055
    Search in Google Scholar
  7. [7] LOEBL H.P., KLEE M., METZMACHER C., BRAND W., MILSOM R., LOK P., Mater. Chem. Phys., 79 (2003), 143.10.1016/S0254-0584(02)00252-3
    Search in Google Scholar
  8. [8] DIMITROVAV., MANOVA D., PASKOVA T., UZUNOV T., IVANOV N., DECHEV D., Vacuum, 51 (1998), 161.10.1016/S0042-207X(98)00150-X
    Search in Google Scholar
  9. [9] MANOVA D., DIMITROVA V., FUKAREK W., KARPUZOV D., Surf. Coat. Tech., 106 (1998), 205.10.1016/S0257-8972(98)00527-1
    Search in Google Scholar
  10. [10] STEVENS K.S., OHTANI A., KINNIBURGH M., BERESFORD R., Appl. Phys. Lett., 65 (1994), 321.10.1063/1.112359
    Search in Google Scholar
  11. [11] YOSHIDA S., MISAWA S., FUJII Y., TAKADA S., HATAKAWA H., GONDA S., ITOH A., J. Vac. Sci. Technol., 16 (1979), 990.10.1116/1.570166
    Search in Google Scholar
  12. [12] OKAMOTO M., YAMAOKA M., YAP Y.K., YOSHIMURA M., MORI Y., SASAKI T., Diam. Relat. Mater., 9 (2000), 516.10.1016/S0925-9635(00)00216-8
    Search in Google Scholar
  13. [13] NORTON M.G., KOTULA P.G., CARTER C.B., J. Appl. Phys., 70 (1991), 2671.10.1063/1.349352
    Search in Google Scholar
  14. [14] VISPUTE R., Thin Solid Films, 299 (1997), 94.10.1016/S0040-6090(96)09395-9
    Search in Google Scholar
  15. [15] OKANO H., TAKAHASHI Y., TANAKA T., SHIBATA K., NAKANO S., Jpn. J. Appl. Phys., 31 (1992), 3446.10.1143/JJAP.31.3446
    Search in Google Scholar
  16. [16] CHENG C.C., CHEN Y.C., WANG H.J., CHEN W.R., J. Vac. Sci. Technol. A, 14 (1996), 2238.10.1116/1.588627
    Search in Google Scholar
  17. [17] NAIK R.S., REIF R., LUTSKY J.J., SODINI C.G., J. Electrochem. Soc., 146 (1999), 691.10.1149/1.1391664
    Search in Google Scholar
  18. [18] OHUCHI S., RUSSEL P.E., J. Vac. Sci. Technol. A, 5 (1987), 1630.
    Search in Google Scholar
  19. [19] HWANG B.-H., CHEN C.-S., LU H.-Y., HSU T.-C., Mat. Sci. Eng. A-Struct., 325 (2002), 380.10.1016/S0921-5093(01)01477-0
    Search in Google Scholar
  20. [20] KAMOHARA T., AKIYAMA M., UENO N., NONAKA K., TATEYAMA H., J. Cryst. Growth, 275 (2005), 383.10.1016/j.jcrysgro.2004.12.014
    Search in Google Scholar
  21. [21] POSADOWSKI W., WIATROWSKI A., DORA J., RADZI´NSKI Z., Thin Solid Films, 516 (14) (2008), 4478.10.1016/j.tsf.2007.05.077
    Search in Google Scholar
  22. [22] BAIL LE A., DUROY H., FOURQUET J.L., Mat. Res. Bull., 23, (1988), 447.10.1016/0025-5408(88)90019-0
    Search in Google Scholar
  23. [23] RODRIGUEZ-CARVAJAL J., Comm. Powder Diffr. Newsl., 26 (2001), 12.
    Search in Google Scholar
  24. [24] THORNTON J.A., J. Vac. Sci. Technol., 4 (1974), 666.
    Search in Google Scholar
  25. [25] GOLDBERG Y., Aluminum Nitride (AlN), in: LEVINSHTEIN M.E., RUMYANTSEV S.L., SHUR M.S. (Eds.), Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, John Wiley & Sons, Inc., New York, 2001.
    Search in Google Scholar
  26. [26] PASZKOWICZ W., PODSIADLO S., MINIKAYEV R., J. Alloy. Compd., 382 (2004), 100. 10.1016/j.jallcom.2004.05.036
    Search in Google Scholar
DOI: https://doi.org/10.1515/msp-2015-0073 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 639 - 643
Submitted on: Jan 15, 2015
|
Accepted on: Apr 25, 2015
|
Published on: Aug 30, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
AlN films,
magnetron sputtering method,
crystalline structure
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 K. Nowakowska-Langier, R. Chodun, K. Zdunek, R. Minikayev, R. Nietubyc, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Previous articleVolume 33 (2015): Issue 3 (September 2015)Next article