Structure of AlN films deposited by magnetron sputtering method
References
- [1] KAR J.P., BOSE G., TULI S., Vacuum, 81 (4) (2006), 494.
- [2] CHIU K.H., CHEN J.H., CHEN H.R., HUANG R.S., Thin Solid Films, 515 (2007), 4819.
- [3] OLIVARES J., RIVERA J., BRIONES A., Diam. Relat. Mater., 16 (2007), 1421.
- [4] JANG K., LEE K., KIM J., HWANG S., LEE J., DHUNGEL S.K., JUNG S., YI J., Mat. Sci. Semicon. Proc., 9 (2006), 1137.
- [5] PRINZ G.M., LADENBURGER A., FENEBERG M., SCHIRRA M., THAPA S.B., BICKERMANN M., EPELBAUM B.M., SCHOLZ F., THONKE K., SAUER R., Superlattice. Microst., 40 (2006), 513.
- [6] DUBOIS M.A., MURALT P., Appl. Phys. Lett., 74 (1999), 3032.
- [7] LOEBL H.P., KLEE M., METZMACHER C., BRAND W., MILSOM R., LOK P., Mater. Chem. Phys., 79 (2003), 143.
- [8] DIMITROVAV., MANOVA D., PASKOVA T., UZUNOV T., IVANOV N., DECHEV D., Vacuum, 51 (1998), 161.
- [9] MANOVA D., DIMITROVA V., FUKAREK W., KARPUZOV D., Surf. Coat. Tech., 106 (1998), 205.
- [10] STEVENS K.S., OHTANI A., KINNIBURGH M., BERESFORD R., Appl. Phys. Lett., 65 (1994), 321.
- [11] YOSHIDA S., MISAWA S., FUJII Y., TAKADA S., HATAKAWA H., GONDA S., ITOH A., J. Vac. Sci. Technol., 16 (1979), 990.
- [12] OKAMOTO M., YAMAOKA M., YAP Y.K., YOSHIMURA M., MORI Y., SASAKI T., Diam. Relat. Mater., 9 (2000), 516.
- [13] NORTON M.G., KOTULA P.G., CARTER C.B., J. Appl. Phys., 70 (1991), 2671.
- [14] VISPUTE R., Thin Solid Films, 299 (1997), 94.
- [15] OKANO H., TAKAHASHI Y., TANAKA T., SHIBATA K., NAKANO S., Jpn. J. Appl. Phys., 31 (1992), 3446.
- [16] CHENG C.C., CHEN Y.C., WANG H.J., CHEN W.R., J. Vac. Sci. Technol. A, 14 (1996), 2238.
- [17] NAIK R.S., REIF R., LUTSKY J.J., SODINI C.G., J. Electrochem. Soc., 146 (1999), 691.
- [18] OHUCHI S., RUSSEL P.E., J. Vac. Sci. Technol. A, 5 (1987), 1630.
- [19] HWANG B.-H., CHEN C.-S., LU H.-Y., HSU T.-C., Mat. Sci. Eng. A-Struct., 325 (2002), 380.
- [20] KAMOHARA T., AKIYAMA M., UENO N., NONAKA K., TATEYAMA H., J. Cryst. Growth, 275 (2005), 383.
- [21] POSADOWSKI W., WIATROWSKI A., DORA J., RADZI´NSKI Z., Thin Solid Films, 516 (14) (2008), 4478.
- [22] BAIL LE A., DUROY H., FOURQUET J.L., Mat. Res. Bull., 23, (1988), 447.
- [23] RODRIGUEZ-CARVAJAL J., Comm. Powder Diffr. Newsl., 26 (2001), 12.
- [24] THORNTON J.A., J. Vac. Sci. Technol., 4 (1974), 666.
- [25] GOLDBERG Y., Aluminum Nitride (AlN), in: LEVINSHTEIN M.E., RUMYANTSEV S.L., SHUR M.S. (Eds.), Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, John Wiley & Sons, Inc., New York, 2001.
- [26] PASZKOWICZ W., PODSIADLO S., MINIKAYEV R., J. Alloy. Compd., 382 (2004), 100.
DOI: https://doi.org/10.1515/msp-2015-0073 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Language: English
Page range: 639 - 643
Submitted on: Jan 15, 2015
Accepted on: Apr 25, 2015
Published on: Aug 30, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Related subjects:
© 2016 K. Nowakowska-Langier, R. Chodun, K. Zdunek, R. Minikayev, R. Nietubyc, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.