Electric measurements of PV heterojunction structures a-SiC/c-Si

Milan Perný; Vladimír Šály; František Janíček; Miroslav Mikolášek; Michal Váry; Jozef Huran

doi:10.1515/jee-2018-0007

Abstract

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

References

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Electric measurements of PV heterojunction structures a-SiC/c-Si

Abstract

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