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Temperature dependence of photoluminescence peaks of porous silicon structures Cover

Temperature dependence of photoluminescence peaks of porous silicon structures

Journal of Electrical Engineering
Volume 68 (2017): Issue 7 (December 2017)
By: Róbert Brunner,  Emil Pinčík,  Michal Kučera,  Ján Greguš,  Pavel Vojtek and  Zuzana Zábudlá  
Open Access
|Dec 2017

Authors

Róbert Brunner

robert.brunner@savba.sk

Institute of Physics, SAS, Bratislava, Slovakia

Emil Pinčík

Institute of Physics, SAS, Bratislava, Slovakia

Michal Kučera

Institute of Electrical Engineering SAS, Bratislava, Slovakia

Ján Greguš

Faculty of Mathematics, Physics, Informatics of Comenius University, Bratislava, Slovakia

Pavel Vojtek

Faculty of Mathematics, Physics, Informatics of Comenius University, Bratislava, Slovakia

Zuzana Zábudlá

Faculty of Mathematics, Physics, Informatics of Comenius University, Bratislava, Slovakia
DOI: https://doi.org/10.1515/jee-2017-0062 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 78 - 80
Submitted on: Apr 23, 2017
|
Published on: Dec 29, 2017
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
porous silicon,
photoluminescence pectrum,
Gaussian peaks,
spectra evaluation
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2017 Róbert Brunner, Emil Pinčík, Michal Kučera, Ján Greguš, Pavel Vojtek, Zuzana Zábudlá, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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