Abstract
When measuring optical parameters of a photovoltaic silicon cell, precise results bring good electrical parameters estimation, applying well-known physical-mathematical models. Nevertheless, considerable re-combination phenomena might occur in both surface and intrinsic thin layers within novel materials. Moreover, rear contact surface parameters may influence close-area re-combination phenomena, too. Therefore, the only precise electrical measurement approach is to prove assumed cell electrical parameters. Based on theoretical approach with respect to experiments, this paper analyses problems within measurement procedures and equipment used for electrical parameters acquisition within a photovoltaic silicon cell, as a case study. Statistical appraisal quality is contributed.