Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes
Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Kotlár, Mário, Marton, Marián, Reháček, Vlastimil
Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers
Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Hotový, Ivan, Kotlár, Mário, Marton, Marián, Řeháček, Vlastimil
Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN
Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Kotlár, Mário, Marton, Marián, Řeháček, Vlastimil