Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode
Florovič, Martin, Szobolovszký, Róbert, Kováč, Jaroslav, Kováč, Jaroslav, Chvála, Aleš, Jacquet, Jean-Claude, Delage, Sylvain Laurent
Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress
Florovič, Martin, Kováč, Jaroslav, Benko, Peter, Chvála, Aleš, Škriniarová, Jaroslava, Kordó, Peter
Deriving the exchange times for a model of trap-assisted tunnelling
Racko, Juraj, Mikolášek, Miroslav, Kadlečíková, Magdaléna, Benko, Peter, Chvála, Aleš