Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric
Liao, Tsung-I, Chang, Sheng-Po, Chang, Shoou-Jinn
Improved efficiency of p-type quasi-mono silicon blanket emitter solar cell by ion implantation and backside rounding
Lee, Chien-Ming, Chang, Sheng-Po, Chang, Shoou-Jinn, Wu, Ching-In