Ion Implantation and Activation: Volume 3

Volume in the series

Ion Implantation and Activation

Publisher:Bentham Science

By: Kunihiro Suzuki

Paid access

|Nov 2013

E-Book €35.99Institutions €151.95

Description

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.
Ion implantation can be expressed theoretically as a binary collisionandexperimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physicalempirical or experimental. Readers can also understand the approximationsand assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experimenteven though many of the models are not well established. Chapters in the book explainin depth various topics such as Pearson functionsLSS theoryMonte Carlo simulationsEdgeworth Polynomials and much more.
This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

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PDF ISBN: 978-1-60805-792-4

Publisher: Bentham Science

Publication date: 2013

Language: English

Pages: 212

Related subjects:

Engineering,

Introductions and overviews,

Engineering, other