Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++
References
- Fischetti, M and Laux, S 1988 Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Physical Review B, 38(14): 9721–9745. DOI: 10.1103/PhysRevB.38.9721
- Pop, E, Dutton, R and Goodson, K 2004 Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion. Journal of Applied Physics, 96(9): 4998–5005. DOI: 10.1063/1.1788838
- Tan, C, Ng, J, Rees, G and David, J 2007 Statistics of Avalanche Current Buildup Time in Single-Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 13(4): 906–910. DOI: 10.1109/JSTQE.2007.903843
- Hayat, M, Saleh, B and Teich, M 1992 Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes. IEEE Transactions on Electron Devices, 39(3): 546–552. DOI: 10.1109/16.123476
- Zhou, X, Ng, J and Tan, C 2012 A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon. Journal of Instrumentation, 7(08): P08006–P08006.
- Plimmer, S, David, J, Ong, D and Li, K 1999 A simple model for avalanche multiplication including deadspace effects. IEEE Transactions on Electron Devices, 46(4): 769–775. DOI: 10.1109/16.753712
- Tan, C, Ghin, R, David, J, Rees, G and Hopkinson, M 2003 The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes. Semiconductor Science and Technology, 18(8): 803–806. DOI: 10.1088/0268-1242/18/8/314
- Mun, S, Tan, C, Goh, Y, Marshall, A and David, J 2008 Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. Journal of Applied Physics, 104(1):
013114 . DOI: 10.1063/1.2952003 - Petticrew, J, Dimler, S, Zhou, X, Morrison, A, Tan, C and Ng, J 2018 Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2): 1–6. DOI: 10.1109/JSTQE.2017.2779834
- Ramo, S 1939 Currents Induced by Electron Motion. Proceedings of the IRE, 27(9): 584–585. DOI: 10.1109/JRPROC.1939.228757
- Petticrew, J, Dimler, S, Zhou, X, Morrison, A, Tan, C and Ng, J 2017 Data for Paper: Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. figshare. DOI: 10.15131/shef.data.4823248
DOI: https://doi.org/10.5334/jors.212 | Journal eISSN: 2049-9647
Language: English
Submitted on: Jan 4, 2018
Accepted on: May 2, 2018
Published on: May 18, 2018
Published by: Ubiquity Press
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
© 2018 Jonathan D. Petticrew, Simon J. Dimler, Jo Shien Ng, published by Ubiquity Press
This work is licensed under the Creative Commons Attribution 4.0 License.