Photovoltaic properties of CU2O/CuxS heterojunction

A simple electrochemical method was developed to fabricate a Cu₂O/Cu_xS heterojunction and it was then used in preparing a thin film photovoltaic solar cell. Cu₂O was prepared by the method of electrodeposition and Cu_xS was coated on Cu₂O by a simple dipping method. The photovoltaic properties of the cell could be improved significantly by heat treatment in air. The maximum conversion efficiency of the cell was 0.1% and V_OC = 180 mV and I_sc = 2.O mA/cm² under A M 1 artificial illumination.