Abstract
Development of the optoelectronic system for non-invasive monitoring of diamond/DLC (Diamond-Like-Carbon) thin films growth during μPA ECR CVD (Microwave Plasma Assisted Electron Cyclotron Resonance Chemical Vapour Deposition) process is described. The system uses multi-point Optical Emission Spectroscopy (OES) and long-working-distance Raman spectroscopy. Dissociation of H2 molecules, excitation and ionization of hydrogen atoms as well as spatial distribution of the molecules are subjects of the OES investigation. The most significant parameters of the deposited film like molecular composition of the film can be investigated by means of Raman spectroscopy. Results of optoelectronic investigation will enable improvement of CVD process parameters and synthesized DLC films quality.