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Photoelectric Properties of Screen-Printed Al-Doped ZnO Films Cover

Photoelectric Properties of Screen-Printed Al-Doped ZnO Films

Open Access
|May 2012

Abstract

The potential of cheap semiconductor materials in the area of solar energy use is illustrated by the example of zinc oxide (pure and Al-doped in various concentrations). Under investigation was the electric conductivity and photoelectric properties of ZnO thin films. The samples were prepared using screen-printing technique. The results of measurements point to non-linear relationships between Al concentration, photosensitivity and electrical conductivity of thin ZnO films. Optimal Al concentration for practical use of ZnO in photovoltaic devices is found to be ~ 1%. The experimental methods, technologies and results described in the paper could be used for further investigations in this area.

DOI: https://doi.org/10.2478/v10047-012-0011-7 | Journal eISSN: 2255-8896 | Journal ISSN: 0868-8257
Language: English
Page range: 51 - 56
Published on: May 18, 2012
Published by: Institute of Physical Energetics
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year

© 2012 A. Ogurcovs, Vj. Gerbreders, E. Tamanis, S. Gerbreders, G. Liberts, published by Institute of Physical Energetics
This work is licensed under the Creative Commons License.

Volume 49 (2012): Issue 2 (April 2012)