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Electronic structures of Hg-doped anatase TiO2 with different O vacancy concentrations Cover

Electronic structures of Hg-doped anatase TiO2 with different O vacancy concentrations

Materials Science-Poland
Volume 32 (2014): Issue 1 (January 2014)
By: S. Zheng,  Guohao Wu,  Suoliang Zhang,  Jie Su,  Lei Liu,  Fang Wang,  Rui Zhao and  Xiaobing Yan  
Open Access
|Mar 2014

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DOI: https://doi.org/10.2478/s13536-013-0162-0 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 93 - 97
Published on: Mar 26, 2014
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Hg doping,
anatase TiO2 ,
O vacancy,
first-principles
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2014 S. Zheng, Guohao Wu, Suoliang Zhang, Jie Su, Lei Liu, Fang Wang, Rui Zhao, Xiaobing Yan, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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