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The influence of boron on the adsorption of Ti and C on TiC surfaces Cover

The influence of boron on the adsorption of Ti and C on TiC surfaces

By: Xiaoliang Fan,  Haimin Ding and  Kaiyu Chu  
Open Access
|Mar 2014

Abstract

The first-principles calculations have been performed to study the influence of boron on the adsorption of Ti and C on different TiC surfaces. It is found that boron can be adsorbed on both TiC (001) and (111) surfaces. When boron is present and carbon supply is high during the preparation of TiC, boron can bond with carbon atoms to form B-C clusters on (001) surface, but the formation of them is less favorable than that of Ti-C clusters. However, under the low carbon-supply condition, both B-B and Ti-Ti clusters can be formed, and, once being formed, B-B clusters are more stable than the Ti-Ti ones. On Ti-terminated (111) surfaces, boron adatoms are more likely to be moved to form B-B clusters. The study of the diffusion of the adatoms on the surfaces demonstrates that boron adatoms can be more easily migrated on (111) surfaces, which further confirms the above results.

DOI: https://doi.org/10.2478/s13536-013-0161-1 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 112 - 120
Published on: Mar 26, 2014
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2014 Xiaoliang Fan, Haimin Ding, Kaiyu Chu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.