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Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE Cover

Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

Materials Science-Poland
Volume 31 (2013): Issue 4 (October 2013)
By: Paulina Kamyczek,  Piotr Bieganski,  Ewa Placzek-Popko,  Eunika Zielony,  Lukasz Gelczuk,  Beata Sciana,  Damian Pucicki,  Damian Radziewicz,  Marek Tlaczala,  Krzysztof Kopalko and  Maria Dabrowska-Szata  
Open Access
|Dec 2013

Authors

Paulina Kamyczek

paulina.kamyczek@pwr.wroc.pl

Piotr Bieganski

Ewa Placzek-Popko

Eunika Zielony

Lukasz Gelczuk

Beata Sciana

Damian Pucicki

Damian Radziewicz

Marek Tlaczala

Krzysztof Kopalko

Maria Dabrowska-Szata

DOI: https://doi.org/10.2478/s13536-013-0144-2 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 595 - 600
Published on: Dec 15, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
GaAs1−xNx,
I-V,
C-V,
transmittance and reflectance spectra
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 Paulina Kamyczek, Piotr Bieganski, Ewa Placzek-Popko, Eunika Zielony, Lukasz Gelczuk, Beata Sciana, Damian Pucicki, Damian Radziewicz, Marek Tlaczala, Krzysztof Kopalko, Maria Dabrowska-Szata, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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