Have a personal or library account? Click to login
Improved efficiency of p-type quasi-mono silicon blanket emitter solar cell by ion implantation and backside rounding Cover

Improved efficiency of p-type quasi-mono silicon blanket emitter solar cell by ion implantation and backside rounding

Materials Science-Poland
Volume 31 (2013): Issue 4 (October 2013)
By: Chien-Ming Lee,  Sheng-Po Chang,  Shoou-Jinn Chang and  Ching-In Wu  
Open Access
|Dec 2013

Authors

Chien-Ming Lee

Sheng-Po Chang

changsp@mail.ncku.edu.tw

Shoou-Jinn Chang

Ching-In Wu

DOI: https://doi.org/10.2478/s13536-013-0129-1 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 516 - 524
Published on: Dec 15, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
quasi-mono wafer,
ion implantation,
POCl3
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 Chien-Ming Lee, Sheng-Po Chang, Shoou-Jinn Chang, Ching-In Wu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Previous articleVolume 31 (2013): Issue 4 (October 2013)Next article