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Effect of annealing on EPR spectra of Ti-Si-C-N samples Cover

Effect of annealing on EPR spectra of Ti-Si-C-N samples

Open Access
|Jun 2012

Abstract

Two nanocrystalline samples of TiC+SiC+20%C (sample 1) and Si3N4+Si(C,N)+Ti(C,N)+1%C (sample 2) were prepared by non-hydrolytic sol-gel method. The latter sample was produced from sample 1, by subjecting it to additional annealing at high temperature. XRD measurements showed the presence of aggregates of cubic SiC+TiC nanoparticles (10 to 30 nm in size). In both samples, a very narrow electron paramagnetic resonance (EPR) line originating from localized magnetic centers was centered at g eff∼2. At T = 130 K, we registered the linewidths ΔH pp = 1.41(2) G and ΔH pp = 2.92(2) G for the sample without and with thermal annealing, respectively. For the non-annealed sample, the resonance line was fitted by a Lorentzian line in the low temperature range, and by a Dysonian line above 70 K, which indicates a significant change in electrical conductivity. Therefore, thermal annealing can significantly improve the transport properties of samples. An analysis of the temperature dependence of the EPR parameters (g-factor, linewidth, integrated intensity) showed that thermal annealing has a significant impact on the reorientation processes of localized magnetic centers.

DOI: https://doi.org/10.2478/s13536-012-0004-5 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 23 - 31
Published on: Jun 16, 2012
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2012 N. Guskos, E. Anagnostakis, G. Zolnierkiewicz, J. Typek, A. Biedunkiewicz, A. Guskos, P. Berczynski, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.