Microwave dielectric properties of BiFeO3 multiferoic films deposited on conductive layers
References
- [1] Fiebig M., J. Phys. D, 38 (2005). R123. http://dx.doi.org/10.1088/0022-3727/38/8/R01
- [2] Smolenskii G.A., Chupis I.E., Sov. Phys. Usp., 25 (1982), 475. http://dx.doi.org/10.1070/PU1982v025n07ABEH004570
- [3] Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Vehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M., Wuttig M., Ramesh R., Science, 299 (2003), 1719. http://dx.doi.org/10.1126/science.1080615
- [4] Yuan G. L., Ora S. W., Liu J. M., Liu Z.G., Appl. Phys. Lett., 89 (2006), 052905. http://dx.doi.org/10.1063/1.2266992
- [5] Yu B., Li M., Liu J., Guo D., Pei L., Zhao X., J. Appl. Phys., 41 (2008), 06503.
- [6] Takahashi K., Kida N., Tonouchi M., Phys. Rev. Lett., 96 (2006), 117402. http://dx.doi.org/10.1103/PhysRevLett.96.117402
- [7] Chen J.-C., Wu J.-M., Appl. Phys. Lett., 91 (2007), 182903. http://dx.doi.org/10.1063/1.2798256
- [8] Zhang X-Y., Song Q., Xu F., Ong C.K., Appl. Phys. Lett., 94 (2009), 022907. http://dx.doi.org/10.1063/1.3062857
- [9] Kamba S., Nuzhnyy D., Savinov M., Šebek J., Petzelt J., Prokleška J., Haumont R., Phys. Rev. B., 75 (2007), 024403. http://dx.doi.org/10.1103/PhysRevB.75.024403
- [10] Qi X., Dho J., Tomov R., Blamire M.G., Macmanus- Driscol J.L., Appl. Phys.Lett., 86 (2005), 062903. http://dx.doi.org/10.1063/1.1862336
- [11] Ma Z., Becker A.J., Polakos P., Huggins H., Pastalan J., Wu H., Watts K., Wong Y.H., Mankiewich P., IEEE Trans. Electron Devices, 45 (1998), 1811. http://dx.doi.org/10.1109/16.661229
- [12] Sobiestianskas R., Vengalis B., Banys J., Proc. IEEE 18th Intl. Symp. Applications of Ferroelectrics ISAF 2009, Xian, China, 2009, p.232.
- [13] Lancaster M.J., Powell J., Porch A., Supercond. Sci. Technol., 11 (1998), 1323. http://dx.doi.org/10.1088/0953-2048/11/11/021
- [14] Krainik N.N., Khuchua N.P., Zhdanova V.V., Evseev V.A., Sov. Phys. Solid State, 8 (1966), 654.
DOI: https://doi.org/10.2478/s13536-011-0008-6 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Language: English
Page range: 41 - 46
Published on: Aug 3, 2011
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Related subjects:
© 2011 R. Sobiestianskas, B. Vengalis, J. Banys, J. Devenson, A. Oginskis, V. Lisauskas, L. Dapkus, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.