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Figure 13.
Parameters of the laboratory model of the PSFB Converter_
| Parameter | Value |
|---|---|
| Input voltage (VIN) | 390 V (reduced to 195 V during measurements) |
| Output voltage (VOUT) | 24 V |
| Output current (IOUT) | 25 A |
| Frequency (f) | 500 kHz |
| Transformer ratio (p) | 6 |
| Leakage inductance (Lk) | 3.5 μH |
| Magnetising inductance | 726.9 μH |
| Filter inductance (L1 and L2) | 22 μH |
| Output capacitance (COUT) | 15 μF |
| Inverter transistors (T1–T4) | GS-065-011 |
| SR transistors (TSR1, TSR2) | EPC 2305 |
| AC transistors (TAC1, TAC2) | ISC046N13NM6ATMA1 |
| AC capacitance (CAC1, CAC2) | 2 μF |
Parameters of the PSFB with CD rectifier_
| Parameter | Value |
|---|---|
| Input voltage (VIN) | 390 V |
| Output voltage (VOUT) | 24 V |
| Output current (IOUT) | 25 A |
| Frequency (f) | 500 kHz |
| Transformer ratio (p) | 6 |
| Leakage inductance (Lk) | 3.5 μH |
| Filter inductance (L1 and L2) | 22 μH |
| Output capacitance (COUT) | 15 μF |
Parameters of selected transistors_
| IPTG014-N10NM5 | IPTG025-N15NM6 | EPC2302 | EPC2305 | |
|---|---|---|---|---|
| Technology | Si | Si | GaN HEMT | GaN HEMT |
| Manuf. | Infineon | Infineon | EPC | EPC |
| VDS (V) | 100 | 150 | 100 | 150 |
| ID (A) | 366 | 264 | 133 | 133 |
| RDson (mΩ) | 1.4 | 2.5 | 1.8 | 2.2 |
| Qoss (nC) | 214 | 310 | 85 | 103 |
| Qg (nC) | 169 | 105 | 23 | 22 |
| RDson Qoss | 299.6 | 775 | 153 | 226.6 |
| RDson Qq | 236.6 | 262.5 | 41.4 | 48.4 |
| Footprint area (mm2) | 120 | 120 | 15 | 15 |
Transistors losses at 100% load_
| IPTG014-N10NM5 | IPTG025-N15NM6 | EPC2302 | EPC2305 | |
|---|---|---|---|---|
| Pcon (W) | 0.22 | 0.39 | 0.28 | 0.34 |
| Poss (W) | 3.38 | 4.89 | 1.34 | 1.63 |
| Pgate (W) | 1.27 | 0.79 | 0.17 | 0.17 |
| Ptotal (W) | 4.86 | 6.07 | 1.79 | 2.13 |