Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Parameters and photovoltaic properties of GNWs/Si solar cells under different growth temperatures and growth times
| Temperature (°C) – time (min) | Voc (V) | Jsc (mA/cm2) | FF (%) | PCE (%) |
|---|---|---|---|---|
| 580 – 120 | 0.346 | 17.51 | 37.28 | 2.26 |
| 590 – 100 | 0.391 | 22.25 | 41.39 | 3.6 |
| 600 – 80 | 0.399 | 23.1 | 41.52 | 3.83 |
| 610 – 70 | 0.37 | 22.1 | 40.9 | 3.34 |
A comparison of the present results with those of previous studies
| Device structure | Active area (cm2) | Sheet resistance (kΩ/sq) | Voc (V) | Jsc (mA/cm2) | FF (%) | PCE (%) |
|---|---|---|---|---|---|---|
| Gr-Uncertain silicon surface [15] | 0.09 | 0.9 | 0.35 | 28 | 36 | 3.5 |
| Gr-micropyramidal silicon [23] | - | 1.28 | 0.351 | 28.7 | 38 | 3.8 |
| Gr-polished silicon [17] | 0.3 | 0.8 | 0.4 | 21.99 | 34.79 | 3.5 |
| Gr-polished silicon [7] | 0.3 | 1.64 | 0.391 | 25.17 | 56.03 | 5.51 |
| Gr-polished silicon [20] | 0.9 | 3.38 | 0.395 | 18.91 | 42.7 | 3.19 |
| Present work | 0.45 | 1.3 | 0.399 | 23.1 | 41.52 | 3.83 |