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The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature Cover

The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature

Materials Science-Poland
Volume 39 (2021): Issue 3 (September 2021)
By: Chuan-Zhen Zhao and  Xue-Lian Qi  
Open Access
|Dec 2021

Figures & Tables

Fig. 1

Dependence of the bandgap energy of GaBixSb1−x on temperature. The experimental values are from Kopaczek et al. [10].

Fig. 2

The bandgap shift of the GaBixSb1−x alloys when the temperature is changed from 15 K to 290 K.

The parameters obtained in Eq_ (2)_

Bi fraction xγ (meV/K)Eg(0) (eV)σ (meV)
00.570.8130
0.0070.570.7838.6
0.0210.570.7418.7
0.0420.570.68625.3
DOI: https://doi.org/10.2478/msp-2021-0025 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 298 - 304
Submitted on: Jun 7, 2021
|
Accepted on: Sep 29, 2021
|
Published on: Dec 16, 2021
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
GaBiSb,
bismuth impurity level,
bandgap energy,
Sb-rich
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2021 Chuan-Zhen Zhao, Xue-Lian Qi, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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