Table 1
Measured material properties as a function of deposition time and cathodic potential based on UV and PEC results.
| Semiconductor type and energy band gaps | |||||
|---|---|---|---|---|---|
| As time of deposition increases | As voltage increases | ||||
| Time (min) | Type | Eg (eV) | Cathodic potential (mV) | Type | Eg (eV) |
| 3 | N | 3.30 | 1,000 | P | 3.23 |
| 6 | N | 3.19 | 1,100 | I-Intrinsic | 3.20 |
| 9 | N | 2.83 | 1,200 | N | 3.00 |
| 12 | N | 2.79 | 1,300 | N | 2.96 |
| 15 | N | 2.70 | 1,400 | N | 2.95 |
[i] PEC, photoelectrochemical cells.
Fig. 1
The energy band gap of Al2Se3 at varied (A) time of deposition and (B) cathodic potential.
Fig. 2
Absorption spectra as a function of wavelength at varied (A) time and (B) voltage (B).
Fig. 3
Percentage of transmittance of Al2Se3 as a function of wavelength at varied (A) time and (B) voltage.
Fig. 4
Reflection spectra as a function of wavelength at varied (A) time and (B) voltage.
Fig. 5
Absorption coefficient as a function of wavelength at varied (A) time and (B) voltage.
Fig. 6
Extinction coefficient as a function of wavelength at varied (A) time and (B) voltage.
Fig. 7
PEC signal as a function of growth voltage for glass/FTO/Al2Se3 layers at varied (A) time and (B) voltage. FTO, fluorine-doped tin oxide; PEC, photoelectrochemical cells.
Table 2
Film thickness values with the variation in the time of deposition and cathodic potential.
| Film thickness as the time of deposition increases | Film thickness as the cathodic potential increases | ||
|---|---|---|---|
| Time (min) | Thickness (nm) | Cathodic potential (mV) | Thickness (nm) |
| 3 | 193 | 1,000 | 234 |
| 6 | 233 | 1,100 | 344 |
| 9 | 399 | 1,200 | 522 |
| 12 | 476 | 1,300 | 714 |
| 15 | 592 | 1,400 | 773 |