References
- 1. Yang, W., Chen, J., Zhang, Y., Zhang, Y., He, J. H., & Fang, X. (2019). Silicon-compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology. Advanced Functional Materials, 29(18), 1808182. DOI: 10.1002/adfm.201808182.
- 2. Goley, P. S., & Cressler, J. D. (2019). Silicon-Based Electronic Photonic Integrated Circuits: Resiliency in the Space Environment. Georgia Institute of Technology Atlanta United States, 220–223. Available at https://apps.dtic.mil/dtic/tr/fulltext/u2/1075341.pdf
- 3. Zhanshe, G., Fucheng, C., Boyu, L., Le, C., Chao, L., & Ke, S. (2015). Research Development of Silicon MEMS Gyroscopes: A Review. Microsystem Technologies, 21(10), 2053–2066. DOI: 10.1007/s00542-015-2645-x.
- 4. Qin, Y., Howlader, M., & Deen, M. (2015). Low-temperature Bonding for Silicon-based Micro-optical Systems. Photonics, 2(4), 1164–1201. Multidisciplinary Digital Publishing Institute. DOI: 10.3390/photonics2041164.10.3390/photonics2041164
- 5. Sharma, V., & Rajawat, A. (2018). Review of Approaches for Radiation Hardened Combinational Logic in CMOS Silicon Technology. IETE Technical Review, 35(6), 562–573. DOI: 10.1080/02564602.2017.134368910.1080/02564602.2017.1343689
- 6. Nalwa, H. S. (ed.). (2001). Silicon-based material and devices, two-volume set: materials and processing, properties and devices 1. Academic Press.
- 7. Shimura, F. (ed.). (2012). Semiconductor silicon crystal technology. Elsevier Science & Technology.
- 8. Sun, Y., & Chmielewski, A. G. (eds.). (2017). Applications of ionizing radiation in materials processing. Institute of Nuclear Chemistry and Technology.
- 9. Gradoboev, A. V., & Simonova, A. V. (2017). Radiation Technologies in the Production of Semiconductor Devices. In IX International Scientific and Practical Conference “Physical and Technical Problems in Science, Industry and Medicine”, 21–22 September 2017. Tomsk: TPU Publishing House.
- 10. Lee, B.J., Zhang, Z.M., Early, E.A., DeWitt, D.P., & Tsai, B.K. (2004). Modeling the Radiative Properties of Silicon with Thin-Film Coatings and the Experimental Validation. In 37th AIAA Therm Conf., 28 June–1 July 2004. Portland: OR.
- 11. Pagava, T. A., & Maisuradze, N. I. (2010). Anomalous Scattering of Electrons in n-Si Crystals Irradiated with Protons. Semiconductors, 44(2), 151–154. DOI: 10.1134/S1063782610020041.10.1134/S1063782610020041
- 12. Gaidar, G. P. (2015). On the Tensoresistance of n-Ge and n-Si Crystals with Radiation-Induced Defects. Semiconductors, 49(9), 1129–1133. DOI: 10.1134/S1063782615090110.10.1134/S1063782615090110
- 13. Funtikov, Y. V., Dubov, L. Y., Shtotsky, Y. V., & Stepanov, S. V. (2016). Radiation-Induced Defects in Si after High Dose Proton Irradiation. Defect and Diffusion Forum, 373, 209–212. Trans Tech Publications. DOI: 10.4028/www.scientific.net/DDF.373.209.10.4028/www.scientific.net/DDF.373.209
- 14. Yeritsyan, H. N., Sahakyan, A. A., Grigoryan, N. E., Harutyunyan, V. V., Grigoryan, B. A., Amatuni, G. A., & Rhodes, C. J. (2018). The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals. Journal of Electronic Materials, 47(7), 4010–4015. DOI: 10.1007/s11664-018-6286-6.10.1007/s11664-018-6286-6
- 15. 15. Ciurea, M. L. (2013). Effect of Stress on Trapping Phenomena in Silicon: from Single Crystal to Nanostructures. Romanian Reports in Physics, 65(3), 841–856.
- 16. Ding, L., Gerardin, S., Paccagnella, A., Gnani, E., Bagatin, M., Driussi, F., & Le Royer, C. (2015). Effects of Electrical Stress and Ionizing Radiation on Si-based TFETs. In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, January 2015 (pp. 137–140). IEEE. Available at https://ieeexplore.ieee.org/document/7063792.
- 17. Momot, I., Malygina, H., Bertini, O., Heuser, J., Sturm, C., Teklishyn, M., & Lymanets, A. (2017). Studies of Radiation Field Impact on Microstrip Sensors for the CBM Silicon Tracking System. Verhandlungen der Deutschen Physikalischen Gesellschaft, 49(44), 1.
- 18. Holbert, K. E., Nessel, J. A., McCready, S. S., Heger, A. S., & Harlow, T. H. (2003). Response of Piezoresistive MEMS Accelerometers and Pressure Transducers to High Gamma Dose. IEEE Transactions on Nuclear Science, 50(6), 1852–1859. Available at https://ieeexplore.ieee.org/document/1263811.
- 19. Marinaro, D. G., McMahon, P., & Wilson, A. (2008). Proton Radiation Effects on MEMS Silicon Strain Gauges. IEEE Transactions on Nuclear Science, 55(3), 1714–1718. Available at https://ieeexplore.ieee.org/document/4545162.10.1109/TNS.2008.921933
- 20. Vlasov, A.I., Mileshin, S., Tsivinskaya, T.A., & Shakhnov, V.A. (2018). Radiation Resistance of MEMS Sensors and Methods of Its Estimation. Problems of Perspective Micro- and Nanoelectronic Systems Development, 4, 190–196.
- 21. Sobolev, N. A. (2013). Radiation Effects in Si-Ge Quantum Size Structure. Semiconductors, 47(2), 217–227. DOI: 10.1134/S1063782613020188.10.1134/S1063782613020188
- 22. Hao, M., Hu, H., Liao, C., & Wang, B. (2017). Effects of Gamma-Ray Radiation on Channel Current of the Uniaxial Strained Si Nano-scale NMOSFET. IEICE Electronics Express, 14(19), 20170866–20170866. DOI: 10.1587/elex.14.20170866.
- 23. Hao, M., Hu, H., Liao, C., Kang, H., Su, H., Zhang, Q., & Zhao, Y. (2017). Total Ionizing Dose Radiation Effect on the Threshold Voltage for the Uniaxial Strained Si Nano NMOSFET. IEICE Electronics Express, 14-20170411. DOI: 10.1587/elex.14.20170411.
- 24. Luniov, S., Zimych, A., Khvyshchun, M., Yevsiuk, M., & Maslyuk, V. (2018). Specific Features of Defect Formation in the n Si. Eastern-European Journal of Enterprise Technologies, 6(12), 35–42. DOI: 10.15587/1729-4061.2018.150959.10.15587/1729-4061.2018.150959
- 25. Fedosov, A. V., Luniov, S. V., & Fedosov, S. A. (2011). Influence of Uniaxial Deformation on the Filling of the Level Associated with A-Center in n-Si Crystals. Ukrainian Journal of Physics, 56(1), 69–73. Available at http://archive.ujp.bitp.kiev.ua/files/journals/56/1/560108p.pdf.
- 26. Fedosov, A. V., Luniov, S. V., & Fedosov, S. A. (2010). Specific Features of Intervalley Scattering of Charge Carriers in n-Si at High Temperatures. Semiconductors, 44(10), 1263–1265. DOI: 10.1134/S1063782610100039.
- 27. Baranskii, P. I., Kolomoets, V. V., & Korolyuk, S. S. (1983). The Non-parabolicity of the n-Si Conduction Band Caused by Elastic Deformation along the [111] Direction. Physica Status Solidi (b), 116(2), K109–K112. DOI: 10.1002/pssb.2221160241.10.1002/pssb.2221160241
- 28. Luniov, S. V., Zimych, A. I., Nazarchuk, P. F., Maslyuk, V. T., & Megela, I. G. (2016). Specific Features of Electron Scattering in Uniaxially Deformed n-Ge Single Crystals in the Presence of Radiation Defects. Radiation Effects and Defects in Solids, 171(11–12), 855–868. DOI: 10.1080/10420150.2016.1250094.10.1080/10420150.2016.1250094
- 29. Luniov, S. V., Burban, O. V., & Nazarchuk, P. F. (2015). Electron Scattering in the Δ1 Model of the Conduction Band of Germanium Single Crystals. Semiconductors, 49(5), 574–578. DOI: 10.1134/S1063782615050140.10.1134/S1063782615050140
- 30. Luniov, S. V., Panasiuk, L. I., & Fedosov, S. A. (2012). Deformation Potential Constants Ξu and Ξd in n-Si Determined with the Use of the Tensoresistance Effect. Ukrainian Journal of Physics, 57(6), 636–641. Available at http://archive.ujp.bitp.kiev.ua/files/journals/57/6/570608p.pdf