Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

G. Chikvaidze; N. Mironova-Ulmane; A. Plaude; O. Sergeev

doi:10.2478/lpts-2014-0019

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Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

Latvian Journal of Physics and Technical Sciences

Volume 51 (2014): Issue 3 (June 2014)

By: G. Chikvaidze, N. Mironova-Ulmane, A. Plaude and O. Sergeev

Open Access

|Jul 2014

Abstract

Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure

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Articles in this issue

DOI: https://doi.org/10.2478/lpts-2014-0019 | Journal eISSN: 2255-8896 | Journal ISSN: 0868-8257

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Language: English

Page range: 51 - 57

Published on: Jul 16, 2014

Published by: Institute of Physical Energetics

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

Silicon carbide (SiC),

polytypes,

Raman spectroscopy,

X-ray diffraction (XRD)

Related subjects:

Physics,

Technical and applied physics

© 2014 G. Chikvaidze, N. Mironova-Ulmane, A. Plaude, O. Sergeev, published by Institute of Physical Energetics
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 51 (2014): Issue 3 (June 2014)