Mutually coupled body bias low noise amplifier using output transformer matching for 5G communication
Abstract
This manuscript presents the realization of low noise amplifier (LNA) for the sub 6 GHz applications having frequency range of 5.7 to 7 GHz with the bandwidth 1.3 GHz. The realized LNA uses the common gate topology decreasing the reflections at the input, i.e., to decrease the S11 parameter, cascode topology is used to enhance the gain of the circuit while source follower topology is used to for the output impedance matching and transformer matching is employed to further enhance the S22 parameter. The body biasing for the connected MOS is done through the RL circuit connected between body and drain. The realized LNA has a maximum gain value of 11.35 dB, minimum S11 value of –22.35 dB, minimum NF value of 2.08 dB and minimum S22 value of –10.06 dB at 6.03 GHz. The process corner simulation for the slow-slow and fast-fast corners are also done and observed that LNA parameters values are under the range. The realized LNA consumes VDD=1.8 V, with current consumption of 11.40 mA, i.e., having power consumption of 20.52 mW.
© 2026 Dheeraj Kalra, Manish Kumar, Mayank Srivastava, published by Slovak University of Technology in Bratislava
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