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Fluorine-doped SnO₂ thin films for solar cells: Development and comparative analysis of spray pyrolysis and spin coating techniques Cover

Fluorine-doped SnO₂ thin films for solar cells: Development and comparative analysis of spray pyrolysis and spin coating techniques

Open Access
|Dec 2025

Abstract

In this study, fluorine-doped tin oxide (FTO) thin films were synthesized using two low-cost solution-based techniques, homemade spray pyrolysis and spin coating, conducted at a substrate temperature of 500 °C. Fluorine was introduced as an n-type dopant in concentrations ranging from 10 to 40 wt% to enhance the electrical conductivity and optical transmittance of the films. The structural, morphological, and optoelectronic properties of the films were characterized via XRD, SEM, UV-Vis spectroscopy, and Hall effect analysis. The spray-deposited FTO films exhibited superior performance, with optimized samples (at 30 wt% F) achieving a sheet resistance of 20 Ω/□, optical transmittance of 80%, and a figure of merit (FOM) of 5.37×10⁻³ Ω⁻¹. In contrast, spin-coated films showed higher resistivity, lower mobility, and reduced FOM (e.g., 1.53×10⁻³ Ω⁻¹ at 840 nm thickness), attributed to inferior film densification and increased structural defects. The results demonstrate that spray pyrolysis enables the formation of dense, well-crystallized FTO layers with enhanced carrier transport and transparency, making it a more suitable deposition technique for optoelectronic and photovoltaic applications.

DOI: https://doi.org/10.2478/jee-2025-0051 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Language: English
Page range: 485 - 498
Submitted on: Aug 1, 2025
Published on: Dec 6, 2025
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year

© 2025 Sherif A. Khaleel, Ahmed M. Abdelsamad, Gaber Magdy, Mohamed I. Shehata, Nehad A. Zidan, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.