References
- W. J. Lee, J. J. Liou, and W. R. Chen, “24 GHz low-noise amplifier using 0.1 μm InP HEMTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 3, pp. 1059-1065, 2005.
- C. K. Lim, K. B. Kim, and K. J. Kim, “A 60 GHz low-noise amplifier using InP HEMT technology,” IEEE Microwave and Wireless Components Letters, vol. 15, no. 9, pp. 597-599, 2005.
- X. Guan, H. Wang, Y. Liu, and X. Guo, “A 60 GHz cascode LNA with improved linearity and gain performance,” IEEE Microwave and Wireless Components Letters, vol. 26, no. 9, pp. 727-729, 2016.
- C. Xu, J. Lin, H. Wang, Y. Liu, and X. Guo, “A 60 GHz CMOS LNA with inductor-peaking technique,” IEEE Microwave and Wireless Components Letters, vol. 26, no. 10, pp. 838-840, 2016.
- Y. Jeon, K. Kim, and H. Yoon, “A 24 GHz low-noise amplifier in 0.18-μm CMOS with modified T-match network,” IEEE Microwave and Wireless Components Letters, vol. 16, no. 10, pp. 560-562, 2006.
- W. Lee, J. Lee, J. Lee, and B. Kim, “A 60-GHz low-noise amplifier in 90-nm RF CMOS technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 12, pp. 2891-2897, 2007.
- W. Lee, J. Lee, J. Lee, and B. Kim, “A 77 GHz SiGe low-noise amplifier with input matching,” IEEE Microwave and Wireless Components Letters, vol. 17, no. 10, pp. 705-707, 2007.
- B.-Z. Lu et al., “A Submilliwatt K-Band Low-Noise Amplifier for Next Generation Radio Astronomical Receivers in 65-nm CMOS Process,” IEEE Microwave and Wireless Components Letters, vol. 30, no. 7, pp. 669-672, 2020.
- M.-Y. Huang, R.-Y. Huang, and R.-M. Weng, “A 0.3 V low cost low power 24 GHz low noise amplifier with body bias technology,” IEEE Computer Society Annual Symposium on VLSI (ISVLSI), Jul. 2017, pp. 519-522.
- C. Li, O. El-Aassar, A. Kumar, M. Boenke, and G. M. Rebeiz, “LNA design with CMOS SOI process-l.4dB NF K/Ka band LNA,” IEEE MTT-S International Microwave Symposium Digest (IMS), pp. 1484-1486, 2018.
- M. Keshavarz Hedayati, A. Abdipour, R. Sarraf Shirazi, C. Cetintepe, and R. B. Staszewski, “A 33-GHz LNA for 5G wireless systems in 28-nm bulk CMOS,” IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 65, no. 10, pp. 1460-1464, 2018.
- S. Kong, H.-D. Lee, S. Jang, J. Park, K.-S. Kim, and K.-C. Lee, “A 28-GHz CMOS LNA with stability-enhanced Gm-boosting technique using transformers,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 7-10, 2019.
- A. A. Kumar, B. D. Sahoo, and A. Dutta, “A wideband 2-5 GHz noise canceling subthreshold low noise amplifier,” IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 65, no. 7, pp. 834-838, 2017.
- B. Cui, J. R. Long, and D. L. Harame, “A 1.7-dB minimum NF, 22-32 GHz low-noise feedback amplifier with multistage noise matching in 22-nm SOI-CMOS,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, pp. 211-214, 2019.
- L. Gao and G. M. Rebeiz, “A 24-43 GHz LNA with 3.1-3.7 dB noise figure and embedded 3-pole elliptic high-pass response for 5G applications in 22 nm FDSOI,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 239-242, 2019.
- P.B. Huynh, J.H. Kim, and T.Y. Yun, “Dual-Resistive Feedback Wideband LNA for Noise Cancellation and Robust Linearization”, IEEE Transaction on Microwave Theory Techniques, vol. 70, no. 4, pp. 2224-2235, 2022.