Have a personal or library account? Click to login
Low-noise and low power CMOS photoreceptor using split-length MOSFET Cover

Low-noise and low power CMOS photoreceptor using split-length MOSFET

Journal of Electrical Engineering
Volume 70 (2019): Issue 6 (December 2019)
By: Jamel Nebhen,  Julien Dubois,  Sofiene Mansouri and  Dominique Ginhac  
Open Access
|Dec 2019

Authors

Jamel Nebhen

j.nebhen@psau.edu.sa

Prince Sattam bin Abdulaziz University, College of Computer Engineering and Sciences, Alkharj

Julien Dubois

julien.dubois@u-bourgogne.fr

Le2i Laboratory of Electronic, Dijon, France

Sofiene Mansouri

s.mansouri@psau.edu.sa

Prince Sattam bin Abdulaziz University, College of Computer Engineering and Sciences, Alkharj

Dominique Ginhac

dom@le2i.cnrs.fr

Le2i Laboratory of Electronic, Dijon, France
DOI: https://doi.org/10.2478/jee-2019-0081 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Journal RSS Feed
Language: English
Page range: 480 - 485
Submitted on: Oct 29, 2019
|
Published on: Dec 31, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
photo-receptor,
image sensor,
low-noise,
low-power,
cmos circuit
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2019 Jamel Nebhen, Julien Dubois, Sofiene Mansouri, Dominique Ginhac, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Previous articleVolume 70 (2019): Issue 6 (December 2019)Next article