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Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode Cover

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Journal of Electrical Engineering
Volume 69 (2018): Issue 5 (September 2018)
By: Martin Florovič,  Róbert Szobolovszký,  Jaroslav Kováč,  Jaroslav Kováč,  Aleš Chvála,  Jean-Claude Jacquet and  Sylvain Laurent Delage  
Open Access
|Dec 2018
DOI: https://doi.org/10.2478/jee-2018-0057 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 390 - 394
Submitted on: Aug 9, 2018
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Published on: Dec 14, 2018
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
high-electron-mobility transistor (HEMT),
AlGaN/GaN
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2018 Martin Florovič, Róbert Szobolovszký, Jaroslav Kováč, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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