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Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction Cover

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

Journal of Electrical Engineering
Volume 66 (2015): Issue 5 (September 2015)
By: Marián Marton,  Miroslav Mikolášek,  Jaroslav Bruncko,  Ivan Novotný,  Tibor Ižák,  Marian Vojs,  Halyna Kozak,  Marián Varga,  Anna Artemenko and  Alexander Kromka  
Open Access
|Nov 2015

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DOI: https://doi.org/10.2478/jee-2015-0045 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 277 - 281
Submitted on: Jul 14, 2015
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Published on: Nov 10, 2015
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
boron doped diamond,
zinc oxide,
Raman spectroscopy,
bipolar heterostructure,
wide-bandgap
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2015 Marián Marton, Miroslav Mikolášek, Jaroslav Bruncko, Ivan Novotný, Tibor Ižák, Marian Vojs, Halyna Kozak, Marián Varga, Anna Artemenko, Alexander Kromka, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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