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Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Journal of Electrical Engineering
Volume 64 (2013): Issue 5 (September 2013)
By:
Open Access
|Oct 2013

References

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DOI: https://doi.org/10.2478/jee-2013-0047 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 323 - 326
Published on: Oct 15, 2013
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
p-GaN,
single wall carbon nanotubes (SWCNT),
ohmic contact,
specific contact resistance,
Au/Cr/SWCNT /p-GaN contact structure,
RTA,
Auger electron spectroscopy
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2013 Jozef Liday, Peter Vogrinčič, Viliam Vretenár, Mário Kotlár, Marián Marton, Vlastimil Reháček, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

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