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Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes Cover

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Journal of Electrical Engineering
Volume 64 (2013): Issue 5 (September 2013)
By: ,  ,  ,  ,   and    
Open Access
|Oct 2013
References

References

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DOI: https://doi.org/10.2478/jee-2013-0047 | Journal eISSN: 1339-309X (formerly 1335-3632) | Journal ISSN: 1335-3632
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Language: English
Page range: 323 - 326
Published on: Oct 15, 2013
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Keywords:
p-GaN,
single wall carbon nanotubes (SWCNT),
ohmic contact,
specific contact resistance,
Au/Cr/SWCNT /p-GaN contact structure,
RTA,
Auger electron spectroscopy
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2013 Jozef Liday, Peter Vogrinčič, Viliam Vretenár, Mário Kotlár, Marián Marton, Vlastimil Reháček, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 64 (2013): Issue 5 (September 2013)
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