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The Effects of MOS Layers on Sensing Properties of MOS Photosensor Cover

The Effects of MOS Layers on Sensing Properties of MOS Photosensor

International Journal on Smart Sensing and Intelligent Systems
Volume 6 (2013): Issue 3 (January 2013)
By: Wagah F. Mohammed,  Mohammed M. Ali,  Munther N. Al-Tikriti and  Kalid Kaleel  
Open Access
|Jun 2013

Authors

Wagah F. Mohammed

wagahfaljubori@yahoo.com

College of Electronics Engineering, Mosul University, Mosul, Iraq

Mohammed M. Ali

moh_19592002@yahoo.co.uk

Faculty of Engineering, Philadelphia University, Amman, Jordan

Munther N. Al-Tikriti

munther_baker44@yahoo.co.uk

College of Electronics Engineering, Mosul University, Mosul, Iraq

Kalid Kaleel

Kalid.kaleel@yahoo.com

Faculty of Engineering, Philadelphia University, Amman, Jordan
DOI: https://doi.org/10.21307/ijssis-2017-581 | Journal eISSN: 1178-5608
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Language: English
Page range: 1102 - 1110
Submitted on: Mar 22, 2013
Accepted on: Apr 30, 2013
Published on: Jun 5, 2013
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
Schottky Barrier Diode,
Photosensor,
MOS Photosensor,
Silicon Photosensor:
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2013 Wagah F. Mohammed, Mohammed M. Ali, Munther N. Al-Tikriti, Kalid Kaleel, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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