Have a personal or library account? Click to login
Optical Probe Current Sensor Module Using the Kerr Effect of Exchange-Coupled Magnetic Film and its Application to Igbt Switching Current Measurements Cover

Optical Probe Current Sensor Module Using the Kerr Effect of Exchange-Coupled Magnetic Film and its Application to Igbt Switching Current Measurements

International Journal on Smart Sensing and Intelligent Systems
Volume 5 (2012): Issue 2 (January 2012)
By: K. Ogawa,  S. Suzuki,  M. Sonehara,  T. Sato and  K. Asanuma  
Open Access
|Jun 2012

Authors

K. Ogawa

keisuke@yslab.shinshu-u.ac.jp

Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan

S. Suzuki

Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan

M. Sonehara

Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan

T. Sato

Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan

K. Asanuma

Department of Production Engineering Nagano Prefectural Institute of Technology Ueda, Nagano, Japan
DOI: https://doi.org/10.21307/ijssis-2017-485 | Journal eISSN: 1178-5608
Journal RSS Feed
Language: English
Page range: 347 - 361
Accepted on: May 8, 2012
Published on: Jun 1, 2012
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
Current sensor,
Optical probe,
Magneto-optical Kerr effect,
Exchange-coupled film,
EV/HEV
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2012 K. Ogawa, S. Suzuki, M. Sonehara, T. Sato, K. Asanuma, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Previous articleVolume 5 (2012): Issue 2 (January 2012)Next article