Optical Probe Current Sensor Module Using the Kerr Effect of Exchange-Coupled Magnetic Film and its Application to Igbt Switching Current Measurements
By:
Authors
K. Ogawa
Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan
S. Suzuki
Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan
M. Sonehara
Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan
T. Sato
Spin Device Technology Center, Shinshu University Nagano, Nagano, Japan
K. Asanuma
Department of Production Engineering Nagano Prefectural Institute of Technology Ueda, Nagano, Japan
DOI: https://doi.org/10.21307/ijssis-2017-485 | Journal eISSN: 1178-5608
Language: English
Page range: 347 - 361
Accepted on: May 8, 2012
Published on: Jun 1, 2012
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 times per year
Related subjects:
© 2012 K. Ogawa, S. Suzuki, M. Sonehara, T. Sato, K. Asanuma, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.