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Device Application of Non-Equilibrium MOS Capacitors Fabricated on High Resistivity Silicon Cover

Device Application of Non-Equilibrium MOS Capacitors Fabricated on High Resistivity Silicon

International Journal on Smart Sensing and Intelligent Systems
Volume 4 (2011): Issue 4 (January 2011)
By: O. Malik and  F. J. De la Hidalga-W  
Open Access
|Dec 2011

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DOI: https://doi.org/10.21307/ijssis-2017-463 | Journal eISSN: 1178-5608
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Language: English
Page range: 686 - 697
Submitted on: Nov 1, 2011
Accepted on: Nov 29, 2011
Published on: Dec 4, 2011
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
MOS-capacitor,
silicon,
pulse-width modulation,
nulling and centering measurements
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 O. Malik, F. J. De la Hidalga-W, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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