Device Application of Non-Equilibrium MOS Capacitors Fabricated on High Resistivity Silicon
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DOI: https://doi.org/10.21307/ijssis-2017-463 | Journal eISSN: 1178-5608
Language: English
Page range: 686 - 697
Submitted on: Nov 1, 2011
Accepted on: Nov 29, 2011
Published on: Dec 4, 2011
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 times per year
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© 2011 O. Malik, F. J. De la Hidalga-W, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.