0.35 μm CMOS Optical Sensor for an Integrated Transimpedance Circuit
By:
References
- [1]M. Li, B. Hayes-Gill, I. Harrison, 6 GHz transimpedance amplifier for optical sensing system in low cost 0.35 μm CMOS. Electronics letters, 42,1278-1279.
- [2]D. Coppée, J. Genoe, J.H. Stiens, R.A. Vounckx, M. Kuijk, “Calculation of the Current Response of the Spatially Modulated Light CMOS Detector,” IEEE Transactions on Electron Devices, vol.48, pp. 1892-1902, September 2001.
- [3]T. K. Woodward and Ashok V. Krishnamoorthy, 1-Gb/s Integrated Optical Detectors and Receivers in Commercial CMOS Technologies, IEEE Journal of Selected Topics in Quantum Electronics, vol. 5, no. 2, March/April 1999.
- [4]Sunderarajan S. Mohan, Maria del Mar Hershenson, Stephen P. Boyd, and Thomas H. Lee, Bandwidth Extension in CMOS with Optimized On-hip Inductors, IEEE J. Solid-State Circuits, Vol. 35, No 3, Marsh 2000.
- [5]Natalie Wong, CMOS Integrated PhotoDiode and Low Voltage Tranimpedance Amplifier in Si- OEIC Application, university of Toronto, available from http:// www.eecg.toronto.edu /~kphang/ ece1371/ pd_tia.pdf
- [6]Sima Dimitrijev, Understanding Semiconductor Devices, Oxford university press, 2000.
- [7]T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits. Cambridge, U.K.: Cambridge Univ. Press, 1998.
- [8]S. J. Sim, J. M. Park, S. M. Park, A 1.8 V, 60 dB Ohm 11 GHz transimpedance amplifier with strong immunity to input parasitic capacitance, IEEE International Symposium on Circuits and Systems (ISCAS), May 2006.
- [9]H. Escid, M. Attari, Low Noise and High bandwidth 0.35 μm CMOS Transimpedance Amplifier, Proceedings of International Conference on Microelectronics (ICM), Marrakech Morocco, December 2009. ieeexplore.ieee.org/xpls/abs_all.jsp? arnumber = 5418634
- [10]Sanz, M.T. del Pozo, J.M.G. Celma, S. Sarmiento, 50th Midwest Symposium on Circuits and Systems, MWSCAS 2007. ieeexplore.ieee.org/ie l5 / 4483493 / 4488527 / 04488587.pdf ? arnumber.
- [11]M. Ingels, G. Van der Plas, J. Crols and M. Steyaert, A CMOS 18THz 240Mb/s transimpedance amplifier and 155Mb/s LED-driver for low cost optical fiber links, IEEE J. Solid-State Circuits 29 (1994) 1552–1559.
- [12]D. M. Pietruszynski. J. M. Steininger and E. J. Swanson, A 50Mbit/s CMOS monolithic optical receiver, IEEE J. Solid-State Circuits 23 (1988) 1426–1433.
- [13]Hsu .C, Wu .J .A, 125-MHz CMOS switched resistor programmable gain amplifier, IEEE J. Solid State Circuits, 2003, 38 : 1663-1670.
- [14]A. Abidi, On the noise optimum of gigahertz FET transimpedance amplifier, IEEE J. SolidState Circuits 22 (1987) 1207–1209.
- [15]M. Ingels and M. Steyaert, A 1 Gb/s, 0.7 μm CMOS optical receiver with full rail-to-rail Swanson, A 50 Mbit/s CMOS monolithic optical receiver, IEEE J. Solid-State Circuits 23 (1988), pp. 1426 - 1433.
- [16]Van Wyk, E., Design of an integrated optical receiver in a standard CMOS process, EUROCON 2003 Ljubljana, Slovenia, vol.2, pp. 427-431, 22-24 Sept. 2003.
- [17]Austria Micro Systems (AMS), 0.35 um CMOS C35 Process Parameters ENG-182, Revision #2.0, 2003
- [18]Chen, Y-J. A integrated CMOS optical receiver wih clock and data recovery circuit, MSc. thesis, University of pretoria, South Africa, Aug. 2005.
DOI: https://doi.org/10.21307/ijssis-2017-451 | Journal eISSN: 1178-5608
Language: English
Page range: 467 - 481
Submitted on: Jul 5, 2011
Accepted on: Aug 18, 2011
Published on: Sep 1, 2011
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 times per year
Keywords:
Related subjects:
© 2011 H. Escid, M. Attari, M. Ait aidir, W. Mechti, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.